SIZ346DT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 17A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16W, 16.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 21.24 грн |
Товар під замовлення
Немає на нашому складі — привозимо зі складу постачальника після оформлення замовлення.
термін постачання:
21-31 дні (днів)
Мінімальна партія:
3000 шт
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Технічний опис SIZ346DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 17A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 16W, 16.7W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V, Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V, Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Інші пропозиції SIZ346DT-T1-GE3 за ціною від 24.41 грн до 85.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SIZ346DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 17A 8PWR33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 16W, 16.7W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA Supplier Device Package: 8-Power33 (3x3) |
на замовлення 6090 шт: термін постачання 21-31 дні (днів) |
|
| SIZ346DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 17A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16W, 16.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
Description: MOSFET 2N-CH 30V 17A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 16W, 16.7W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 325pF @ 15V, 650pF @ 15V
Rds On (Max) @ Id, Vgs: 28.5mOhm @ 10A, 10V, 11.5mOhm @ 14.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 4.5V, 9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 250µA, 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
на замовлення 6090 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 85.62 грн |
| 10+ | 51.25 грн |
| 50+ | 37.92 грн |
| 100+ | 31.53 грн |
| 500+ | 24.41 грн |