SIZ348DT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.7W (Ta), 16.7W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
| Кількість | Ціна |
|---|---|
| 3000+ | 32.77 грн |
| 6000+ | 30.06 грн |
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Технічний опис SIZ348DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.7W (Ta), 16.7W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V, Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: 8-Power33 (3x3).
Інші пропозиції SIZ348DT-T1-GE3 за ціною від 30.03 грн до 117.31 грн
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SIZ348DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33 Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.7W (Ta), 16.7W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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SIZ348DT-T1-GE3 | Vishay / Siliconix |
MOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3 |
на замовлення 4219 шт: термін постачання 21-30 дні (днів) |
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| SIZ348DT-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 18A/30A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18.2nC @ 10V
Rds On (Max) @ Id, Vgs: 7.12mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 30A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.7W (Ta), 16.7W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 79.34 грн |
| 10+ | 62.41 грн |
| 100+ | 48.55 грн |
| 500+ | 38.62 грн |
| 1000+ | 31.46 грн |
| SIZ348DT-T1-GE3 |
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Виробник: Vishay / Siliconix
MOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3
MOSFETs 30V Vds 20V Vgs PowerPAIR 3 x 3
на замовлення 4219 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 117.31 грн |
| 10+ | 71.79 грн |
| 100+ | 41.06 грн |
| 500+ | 33.80 грн |
| 1000+ | 30.93 грн |
| 3000+ | 30.03 грн |