SIZ704DT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Supplier Device Package: 6-PowerPair™
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 20W, 30W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Half Bridge)
Mounting Type: Surface Mount
Package / Case: 6-PowerPair™
Packaging: Tape & Reel (TR)
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Технічний опис SIZ704DT-T1-GE3 Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR, Supplier Device Package: 6-PowerPair™, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 12A, 16A, Drain to Source Voltage (Vdss): 30V, Power - Max: 20W, 30W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Half Bridge), Mounting Type: Surface Mount, Package / Case: 6-PowerPair™, Packaging: Tape & Reel (TR).
Інші пропозиції SIZ704DT-T1-GE3 за ціною від 31.82 грн до 114.94 грн
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SIZ704DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR Packaging: Cut Tape (CT) Package / Case: 6-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 20W, 30W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-PowerPair™ |
на замовлення 6067 шт: термін постачання 21-31 дні (днів) |
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| SIZ704DT-T1-GE3 | VISHAY |
QFN |
на замовлення 90 шт: термін постачання 14-28 дні (днів) |
В кошику од. на суму грн. |
| SIZ704DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
Description: MOSFET 2N-CH 30V 12A 6PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 6-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 20W, 30W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Input Capacitance (Ciss) (Max) @ Vds: 435pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-PowerPair™
на замовлення 6067 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 114.94 грн |
| 10+ | 70.45 грн |
| 100+ | 47.15 грн |
| 500+ | 34.85 грн |
| 1000+ | 31.82 грн |
| SIZ704DT-T1-GE3 |
|
Виробник: VISHAY
QFN
QFN
на замовлення 90 шт:
термін постачання 14-28 дні (днів)