Технічний опис SIZ910DT-T1-GE3 Vishay
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Half Bridge), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 48W, 100W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V, Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: 8-PowerPair® (6x5).
Інші пропозиції SIZ910DT-T1-GE3
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SIZ910DT-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
товару немає в наявності |
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![]() |
SIZ910DT-T1-GE3 | Виробник : Vishay Siliconix |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 48W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1500pF @ 15V Rds On (Max) @ Id, Vgs: 5.8mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
товару немає в наявності |