SIZ918DT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 50.24 грн |
| 6000+ | 45.38 грн |
| 9000+ | 44.41 грн |
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Технічний опис SIZ918DT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ918DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 28 A, 28 A, 0.01 ohm, tariffCode: 85412900, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 28A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 30V, MSL: MSL 1 - unbegrenzt, Dauer-Drainstrom Id, n-Kanal: 28A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.01ohm, Verlustleistung, p-Kanal: 100W, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: PowerPAIR, Anzahl der Pins: 10Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.01ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal + Schottky, Verlustleistung, n-Kanal: 100W, Betriebstemperatur, max.: 150°C.
Інші пропозиції SIZ918DT-T1-GE3 за ціною від 51.02 грн до 174.40 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SIZ918DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 29W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 16A, 28A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
на замовлення 19400 шт: термін постачання 21-31 дні (днів) |
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SIZ918DT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ918DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 28 A, 28 A, 0.01 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 28A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 28A Drain-Source-Durchgangswiderstand, p-Kanal: 0.01ohm Verlustleistung, p-Kanal: 100W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAIR Anzahl der Pins: 10Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.01ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 100W Betriebstemperatur, max.: 150°C |
на замовлення 2022 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIZ918DT-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5 |
на замовлення 3134 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIZ918DT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ918DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 28 A, 28 A, 0.01 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 28A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 28A Drain-Source-Durchgangswiderstand, p-Kanal: 0.01ohm Verlustleistung, p-Kanal: 100W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: PowerPAIR Anzahl der Pins: 10Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.01ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 100W Betriebstemperatur, max.: 150°C |
на замовлення 2022 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SIZ918DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Description: MOSFET 2N-CH 30V 16A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 29W, 100W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 16A, 28A
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V
Rds On (Max) @ Id, Vgs: 12mOhm @ 13.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
на замовлення 19400 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 174.40 грн |
| 10+ | 107.84 грн |
| 100+ | 73.68 грн |
| 500+ | 55.42 грн |
| 1000+ | 51.02 грн |
| SIZ918DT-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIZ918DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 28 A, 28 A, 0.01 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 28A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 28A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.01ohm
Verlustleistung, p-Kanal: 100W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 10Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.01ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 100W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SIZ918DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 28 A, 28 A, 0.01 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 28A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 28A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.01ohm
Verlustleistung, p-Kanal: 100W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 10Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.01ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 100W
Betriebstemperatur, max.: 150°C
на замовлення 2022 шт:
термін постачання 21-31 дні (днів)
| SIZ918DT-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5
MOSFETs 30V Vds 20V Vgs PowerPAIR 6 x 5
на замовлення 3134 шт:
термін постачання 21-30 дні (днів)
| SIZ918DT-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIZ918DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 28 A, 28 A, 0.01 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 28A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 28A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.01ohm
Verlustleistung, p-Kanal: 100W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 10Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.01ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 100W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SIZ918DT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 28 A, 28 A, 0.01 ohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 28A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 28A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.01ohm
Verlustleistung, p-Kanal: 100W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 10Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.01ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 100W
Betriebstemperatur, max.: 150°C
на замовлення 2022 шт:
термін постачання 21-31 дні (днів)