Інші пропозиції SIZ920DT-T1-GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SIZ920DT-T1-GE3 | Виробник : Vishay |
 Trans MOSFET N-CH 30V 22A/32A 8-Pin PowerPAIR EP T/R |
товару немає в наявності |
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SIZ920DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 39W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
товару немає в наявності |
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SIZ920DT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 40A 8POWERPAIR Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 39W, 100W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 1260pF @ 15V Rds On (Max) @ Id, Vgs: 7.1mOhm @ 18.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 35nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) |
товару немає в наявності |