Інші пропозиції SIZ980BDT-T1-GE3 за ціною від 41.14 грн до 190.06 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SIZ980BDT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIRPackaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
на замовлення 9000 шт: термін постачання 21-31 дні (днів) |
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SIZ980BDT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
на замовлення 13593 шт: термін постачання 21-31 дні (днів) |
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SIZ980BDT-T1-GE3 | Vishay Semiconductors |
MOSFETs N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5 |
на замовлення 13649 шт: термін постачання 31-40 дні (днів) |
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SIZ980BDT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 197A Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm Verlustleistung, p-Kanal: 66W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 66W Betriebstemperatur, max.: 150°C |
на замовлення 4715 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIZ980BDT-T1-GE3 | VISHAY |
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 197A Dauer-Drainstrom Id, p-Kanal: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 197A Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm Verlustleistung, p-Kanal: 66W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: Lead (04-Feb-2026) Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 66W Betriebstemperatur, max.: 150°C |
на замовлення 4715 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SIZ980BDT-T1-GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 42.23 грн |
| SIZ980BDT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
на замовлення 13593 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 125.90 грн |
| 10+ | 81.97 грн |
| 100+ | 58.02 грн |
| 500+ | 44.42 грн |
| 1000+ | 41.14 грн |
| SIZ980BDT-T1-GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5
MOSFETs N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5
на замовлення 13649 шт:
термін постачання 31-40 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 190.06 грн |
| 10+ | 91.52 грн |
| 100+ | 71.70 грн |
| 500+ | 56.98 грн |
| 1000+ | 56.38 грн |
| SIZ980BDT-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C
на замовлення 4715 шт:
термін постачання 21-31 дні (днів)
| SIZ980BDT-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 197A
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 197A
Dauer-Drainstrom Id, p-Kanal: 197A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
MSL: MSL 1 - unbegrenzt
Dauer-Drainstrom Id, n-Kanal: 197A
Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm
Verlustleistung, p-Kanal: 66W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV SkyFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal + Schottky
Verlustleistung, n-Kanal: 66W
Betriebstemperatur, max.: 150°C
на замовлення 4715 шт:
термін постачання 21-31 дні (днів)