SIZ980BDT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual), Schottky
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V
Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 43.54 грн |
6000+ | 39.93 грн |
9000+ | 38.09 грн |
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Технічний опис SIZ980BDT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 197A, Dauer-Drainstrom Id, p-Kanal: 197A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 30V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 197A, Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm, Verlustleistung, p-Kanal: 66W, Drain-Source-Spannung Vds, n-Kanal: 30V, euEccn: NLR, Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pins, Produktpalette: TrenchFET Gen IV SkyFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal + Schottky, Verlustleistung, n-Kanal: 66W, Betriebstemperatur, max.: 150°C.
Інші пропозиції SIZ980BDT-T1-GE3 за ціною від 31.78 грн до 115.27 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||
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SIZ980BDT-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm tariffCode: 85412900 Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 197A Dauer-Drainstrom Id, p-Kanal: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 197A Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm Verlustleistung, p-Kanal: 66W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 66W Betriebstemperatur, max.: 150°C |
на замовлення 11856 шт: термін постачання 21-31 дні (днів) |
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SIZ980BDT-T1-GE3 | Виробник : VISHAY |
Description: VISHAY - SIZ980BDT-T1-GE3 - Dual-MOSFET, n-Kanal + Schottky, 30 V, 30 V, 197 A, 197 A, 817 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 197A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 30V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 197A Drain-Source-Durchgangswiderstand, p-Kanal: 817µohm Verlustleistung, p-Kanal: 66W Drain-Source-Spannung Vds, n-Kanal: 30V euEccn: NLR Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pins Produktpalette: TrenchFET Gen IV SkyFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 817µohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal + Schottky Verlustleistung, n-Kanal: 66W Betriebstemperatur, max.: 150°C |
на замовлення 11856 шт: термін постачання 21-31 дні (днів) |
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SIZ980BDT-T1-GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 30V 23.7A 8PWRPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual), Schottky Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 20W (Tc), 5W (Ta), 66W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 23.7A (Ta), 54.8A (Tc), 54.3A (Ta), 197A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 15V, 3655pF @ 15V Rds On (Max) @ Id, Vgs: 4.39mOhm @ 15A, 10V, 1.06mOhm @ 19A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, 79nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
на замовлення 13638 шт: термін постачання 21-31 дні (днів) |
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SIZ980BDT-T1-GE3 | Виробник : Vishay Semiconductors | MOSFET N-CHANNEL 30-V (D-S) PowerPAIR 6 x 5 |
на замовлення 15724 шт: термін постачання 21-30 дні (днів) |
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SIZ980BDT-T1-GE3 Код товару: 173623 |
Транзистори > Польові N-канальні |
товар відсутній
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SIZ980BDT-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 30V 23.7A/54.3A 8-Pin PowerPAIR EP |
товар відсутній |
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SIZ980BDT-T1-GE3 | Виробник : Vishay | Trans MOSFET N-CH 30V 23.7A/54.3A 8-Pin PowerPAIR EP |
товар відсутній |
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SIZ980BDT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky On-state resistance: 7.12/1.72mΩ Power dissipation: 20/66W Polarisation: unipolar Drain current: 54.8/197A Kind of package: reel; tape Drain-source voltage: 30V Gate charge: 18/79nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 90...130A кількість в упаковці: 3000 шт |
товар відсутній |
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SIZ980BDT-T1-GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2 + Schottky; TrenchFET®; unipolar; 30V Type of transistor: N-MOSFET x2 + Schottky On-state resistance: 7.12/1.72mΩ Power dissipation: 20/66W Polarisation: unipolar Drain current: 54.8/197A Kind of package: reel; tape Drain-source voltage: 30V Gate charge: 18/79nC Mounting: SMD Technology: TrenchFET® Kind of channel: enhanced Pulsed drain current: 90...130A |
товар відсутній |