SIZF4800LDT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Tape & Reel (TR)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 47.59 грн |
| 6000+ | 42.95 грн |
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Технічний опис SIZF4800LDT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZF4800LDT-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 80 V, 36 A, 0.016 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: -, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: -, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 36A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: -, Drain-Source-Spannung Vds, n-Kanal: 80V, euEccn: NLR, Bauform - Transistor: PowerPAIR 3 x 3FS, Anzahl der Pins: 12Pin(s), Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: Zweifach n-Kanal, Verlustleistung, n-Kanal: 56.8W, Betriebstemperatur, max.: 150°C, SVHC: Lead (21-Jan-2025).
Інші пропозиції SIZF4800LDT-T1-GE3 за ціною від 48.38 грн до 165.80 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SIZF4800LDT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 80V 10A PWRPAIR Packaging: Cut Tape (CT) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4.5W (Ta), 56.8W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS |
на замовлення 7268 шт: термін постачання 21-31 дні (днів) |
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SIZF4800LDT-T1-GE3 | Vishay / Siliconix |
MOSFETs PPAIR3X3 2NCH 80V 10A |
на замовлення 8866 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIZF4800LDT-T1-GE3 | VISHAY |
Description: VISHAY - SIZF4800LDT-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 80 V, 36 A, 0.016 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 36A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: PowerPAIR 3 x 3FS Anzahl der Pins: 12Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 56.8W Betriebstemperatur, max.: 150°C SVHC: Lead (21-Jan-2025) |
на замовлення 5206 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SIZF4800LDT-T1-GE3 | VISHAY |
Description: VISHAY - SIZF4800LDT-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 80 V, 36 A, 0.016 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 36A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: PowerPAIR 3 x 3FS Anzahl der Pins: 12Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 56.8W Betriebstemperatur, max.: 150°C SVHC: Lead (21-Jan-2025) |
на замовлення 5206 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SIZF4800LDT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Description: MOSFET 2N-CH 80V 10A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4.5W (Ta), 56.8W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 950pF @ 40V
Rds On (Max) @ Id, Vgs: 19mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
на замовлення 7268 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 165.80 грн |
| 10+ | 102.87 грн |
| 100+ | 70.10 грн |
| 500+ | 52.62 грн |
| 1000+ | 48.38 грн |
| SIZF4800LDT-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs PPAIR3X3 2NCH 80V 10A
MOSFETs PPAIR3X3 2NCH 80V 10A
на замовлення 8866 шт:
термін постачання 21-30 дні (днів)
| SIZF4800LDT-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIZF4800LDT-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 80 V, 36 A, 0.016 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 36A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 80V
euEccn: NLR
Bauform - Transistor: PowerPAIR 3 x 3FS
Anzahl der Pins: 12Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 56.8W
Betriebstemperatur, max.: 150°C
SVHC: Lead (21-Jan-2025)
Description: VISHAY - SIZF4800LDT-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 80 V, 36 A, 0.016 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 36A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 80V
euEccn: NLR
Bauform - Transistor: PowerPAIR 3 x 3FS
Anzahl der Pins: 12Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 56.8W
Betriebstemperatur, max.: 150°C
SVHC: Lead (21-Jan-2025)
на замовлення 5206 шт:
термін постачання 21-31 дні (днів)
| SIZF4800LDT-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIZF4800LDT-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 80 V, 36 A, 0.016 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 36A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 80V
euEccn: NLR
Bauform - Transistor: PowerPAIR 3 x 3FS
Anzahl der Pins: 12Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 56.8W
Betriebstemperatur, max.: 150°C
SVHC: Lead (21-Jan-2025)
Description: VISHAY - SIZF4800LDT-T1-GE3 - Dual-MOSFET, Zweifach n-Kanal, 80 V, 36 A, 0.016 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: -
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: -
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 36A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: -
Drain-Source-Spannung Vds, n-Kanal: 80V
euEccn: NLR
Bauform - Transistor: PowerPAIR 3 x 3FS
Anzahl der Pins: 12Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.016ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: Zweifach n-Kanal
Verlustleistung, n-Kanal: 56.8W
Betriebstemperatur, max.: 150°C
SVHC: Lead (21-Jan-2025)
на замовлення 5206 шт:
термін постачання 21-31 дні (днів)