SIZF5302DT-T1-RE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 2+ | 188.31 грн |
| 10+ | 119.96 грн |
| 100+ | 71.19 грн |
| 500+ | 57.73 грн |
| 3000+ | 54.69 грн |
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Технічний опис SIZF5302DT-T1-RE3 Vishay Semiconductors
Description: MOSFET 2N-CH 30V 28.1A PWRPAIR, Packaging: Tape & Reel (TR), Package / Case: 12-PowerPair™, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.8W (Ta), 48.1W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V, Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: PowerPAIR® 3x3FS, Part Status: Active.
Інші пропозиції SIZF5302DT-T1-RE3 за ціною від 57.97 грн до 191.89 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIZF5302DT-T1-RE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 28.1A PWRPAIRPackaging: Cut Tape (CT) Package / Case: 12-PowerPair™ Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.8W (Ta), 48.1W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerPAIR® 3x3FS Part Status: Active |
на замовлення 2351 шт: термін постачання 21-31 дні (днів) |
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| SIZF5302DT-T1-RE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
Description: MOSFET 2N-CH 30V 28.1A PWRPAIR
Packaging: Cut Tape (CT)
Package / Case: 12-PowerPair™
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.8W (Ta), 48.1W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 28.1A (Ta), 100A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1030pF @ 15V
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PowerPAIR® 3x3FS
Part Status: Active
на замовлення 2351 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 191.89 грн |
| 10+ | 119.19 грн |
| 100+ | 81.84 грн |
| 500+ | 61.78 грн |
| 1000+ | 57.97 грн |