SIZF920DT-T1-GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 3+ | 115.12 грн |
| 10+ | 98.89 грн |
| 100+ | 71.89 грн |
| 250+ | 69.50 грн |
| 500+ | 63.29 грн |
| 1000+ | 56.74 грн |
| 3000+ | 54.13 грн |
Відгуки про товар
Написати відгук
Технічний опис SIZF920DT-T1-GE3 Vishay / Siliconix
Description: MOSFET 2N-CH 30V 28A 8POWERPAIR, Part Status: Active, Supplier Device Package: 8-PowerPair® (6x5), Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V, Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: 2 N-Channel (Dual), Schottky, Mounting Type: Surface Mount, Package / Case: 8-PowerWDFN, Packaging: Tape & Reel (TR).
Інші пропозиції SIZF920DT-T1-GE3 за ціною від 59.13 грн до 199.82 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SIZF920DT-T1-GE3 | Vishay Siliconix |
 Description: MOSFET 2N-CH 30V 28A 8POWERPAIRPart Status: Active Supplier Device Package: 8-PowerPair® (6x5) Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual), Schottky Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
на замовлення 2211 шт: термін постачання 21-31 дні (днів) |
|
| SIZF920DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 28A 8POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 28A 8POWERPAIR
Part Status: Active
Supplier Device Package: 8-PowerPair® (6x5)
Vgs(th) (Max) @ Id: 2.4V @ 250µA, 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, 125nC @ 10V
Rds On (Max) @ Id, Vgs: 3.07mOhm @ 10A, 10V, 1.05mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V, 5230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 76A (Tc), 49A (Ta), 197A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual), Schottky
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
на замовлення 2211 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 199.82 грн |
| 10+ | 124.00 грн |
| 100+ | 85.02 грн |
| 500+ | 64.16 грн |
| 1000+ | 59.13 грн |