SIZF928DT-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 33A 8POWERPAIR
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
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Технічний опис SIZF928DT-T1-GE3 Vishay Siliconix
Description: VISHAY - SIZF928DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 248 A, 248 A, 530 µohm, tariffCode: 85412900, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 248A, Dauer-Drainstrom Id, p-Kanal: 248A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 30V, Dauer-Drainstrom Id, n-Kanal: 248A, Drain-Source-Durchgangswiderstand, p-Kanal: 530µohm, Verlustleistung, p-Kanal: 74W, Drain-Source-Spannung Vds, n-Kanal: 30V, SVHC: Lead (21-Jan-2025), Bauform - Transistor: PowerPAIR, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Gen IV Series, Drain-Source-Durchgangswiderstand, n-Kanal: 530µohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 74W, Betriebstemperatur, max.: 150°C.
Інші пропозиції SIZF928DT-T1-GE3 за ціною від 51.67 грн до 205.29 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SIZF928DT-T1-GE3 | VISHAY |
Description: VISHAY - SIZF928DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 248 A, 248 A, 530 µohm tariffCode: 85412900 euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 248A Dauer-Drainstrom Id, p-Kanal: 248A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 248A Drain-Source-Durchgangswiderstand, p-Kanal: 530µohm Verlustleistung, p-Kanal: 74W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 530µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 74W Betriebstemperatur, max.: 150°C |
на замовлення 11897 шт: термін постачання 21-31 дні (днів) |
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SIZF928DT-T1-GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 30V 33A 8POWERPAIR Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc) Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-PowerPair® (6x5) Part Status: Active |
на замовлення 6064 шт: термін постачання 21-31 дні (днів) |
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SIZF928DT-T1-GE3 | Vishay / Siliconix |
MOSFETs PPAIR6X5 2NCH 30V 33A |
на замовлення 2890 шт: термін постачання 21-30 дні (днів) |
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SIZF928DT-T1-GE3 | VISHAY |
Description: VISHAY - SIZF928DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 248 A, 248 A, 530 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 248A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 248A Drain-Source-Durchgangswiderstand, p-Kanal: 530µohm Verlustleistung, p-Kanal: 74W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: Lead (21-Jan-2025) Bauform - Transistor: PowerPAIR Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Gen IV Series Drain-Source-Durchgangswiderstand, n-Kanal: 530µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 74W Betriebstemperatur, max.: 150°C |
на замовлення 11897 шт: термін постачання 21-31 дні (днів) |
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| SIZF928DT-T1-GE3 |
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Виробник: VISHAY
Description: VISHAY - SIZF928DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 248 A, 248 A, 530 µohm
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 248A
Dauer-Drainstrom Id, p-Kanal: 248A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
Dauer-Drainstrom Id, n-Kanal: 248A
Drain-Source-Durchgangswiderstand, p-Kanal: 530µohm
Verlustleistung, p-Kanal: 74W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 530µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 74W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SIZF928DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 248 A, 248 A, 530 µohm
tariffCode: 85412900
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 248A
Dauer-Drainstrom Id, p-Kanal: 248A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 30V
Dauer-Drainstrom Id, n-Kanal: 248A
Drain-Source-Durchgangswiderstand, p-Kanal: 530µohm
Verlustleistung, p-Kanal: 74W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 530µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 74W
Betriebstemperatur, max.: 150°C
на замовлення 11897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 91.24 грн |
| 500+ | 62.86 грн |
| 1000+ | 54.61 грн |
| 5000+ | 51.67 грн |
| SIZF928DT-T1-GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 30V 33A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
Description: MOSFET 2N-CH 30V 33A 8POWERPAIR
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.9W (Ta), 28W (Tc), 4.5W (Ta), 74W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 88A (Tc), 61A (Ta), 248A (Tc)
Rds On (Max) @ Id, Vgs: 2.45mOhm @ 10A, 10V, 0.75mOhm @ 15A, 10V
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-PowerPair® (6x5)
Part Status: Active
на замовлення 6064 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 183.82 грн |
| 10+ | 114.45 грн |
| 100+ | 78.66 грн |
| 500+ | 60.06 грн |
| SIZF928DT-T1-GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs PPAIR6X5 2NCH 30V 33A
MOSFETs PPAIR6X5 2NCH 30V 33A
на замовлення 2890 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 205.29 грн |
| 10+ | 130.89 грн |
| 100+ | 78.21 грн |
| 500+ | 63.05 грн |
| 1000+ | 59.35 грн |
| 3000+ | 56.21 грн |
| SIZF928DT-T1-GE3 |
|
Виробник: VISHAY
Description: VISHAY - SIZF928DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 248 A, 248 A, 530 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 248A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
Dauer-Drainstrom Id, n-Kanal: 248A
Drain-Source-Durchgangswiderstand, p-Kanal: 530µohm
Verlustleistung, p-Kanal: 74W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 530µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 74W
Betriebstemperatur, max.: 150°C
Description: VISHAY - SIZF928DT-T1-GE3 - Dual-MOSFET, n-Kanal, 30 V, 30 V, 248 A, 248 A, 530 µohm
tariffCode: 85412900
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 248A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 30V
Dauer-Drainstrom Id, n-Kanal: 248A
Drain-Source-Durchgangswiderstand, p-Kanal: 530µohm
Verlustleistung, p-Kanal: 74W
Drain-Source-Spannung Vds, n-Kanal: 30V
SVHC: Lead (21-Jan-2025)
Bauform - Transistor: PowerPAIR
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Gen IV Series
Drain-Source-Durchgangswiderstand, n-Kanal: 530µohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 74W
Betriebstemperatur, max.: 150°C
на замовлення 11897 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 205.29 грн |
| 10+ | 132.79 грн |
| 100+ | 91.24 грн |
| 500+ | 62.86 грн |
| 1000+ | 54.61 грн |
| 5000+ | 51.67 грн |