SLA5060
Виробник:
на замовлення 1000 шт:
термін постачання 14-28 дні (днів)
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Технічний опис SLA5060
Description: MOSFET 3N/3P-CH 60V 6A 12SIP, Packaging: Bulk, Package / Case: 12-SIP Exposed Tab, Mounting Type: Through Hole, Configuration: 3 N and 3 P-Channel (3-Phase Bridge), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 5W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 790pF @ 10V, Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V, FET Feature: Logic Level Gate, Supplier Device Package: 12-SIP.
Інші пропозиції SLA5060
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SLA5060 | Sanken Electric USA Inc. |
Description: MOSFET 3N/3P-CH 60V 6A 12SIP Packaging: Bulk Package / Case: 12-SIP Exposed Tab Mounting Type: Through Hole Configuration: 3 N and 3 P-Channel (3-Phase Bridge) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 5W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 790pF @ 10V Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V FET Feature: Logic Level Gate Supplier Device Package: 12-SIP |
товару немає в наявності |
Мінімальне замовлення: 1080 шт В кошику од. на суму грн. |
| SLA5060 |
|
Виробник: Sanken Electric USA Inc.
Description: MOSFET 3N/3P-CH 60V 6A 12SIP
Packaging: Bulk
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 790pF @ 10V
Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V
FET Feature: Logic Level Gate
Supplier Device Package: 12-SIP
Description: MOSFET 3N/3P-CH 60V 6A 12SIP
Packaging: Bulk
Package / Case: 12-SIP Exposed Tab
Mounting Type: Through Hole
Configuration: 3 N and 3 P-Channel (3-Phase Bridge)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 6A
Input Capacitance (Ciss) (Max) @ Vds: 320pF @ 10V, 790pF @ 10V
Rds On (Max) @ Id, Vgs: 220mOhm @ 3A, 4V
FET Feature: Logic Level Gate
Supplier Device Package: 12-SIP
товару немає в наявності
Мінімальне замовлення: 1080 шт
В кошику
од. на суму грн.