SMA5106 Sanken Electric Company, Ltd.

Description: MOSFET 4N-CH 100V 4A 12SIP, Packaging: Tube, Package / Case: 12-SIP, Mounting Type: Through Hole, Transistor Type: 4 NPN Darlington (Quad), Configuration: 4 N-Channel, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W (Ta), 28W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 4A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 230pF @ 25V, Rds On (Max) @ Id, Vgs: 550mOhm @ 2A, 10V, Current - Collector (Ic) (Max): 5A, Voltage - Collector Emitter Breakdown (Max): 120V, Vce Saturation (Max) @ Ib, Ic: 1.5V @ 3mA, 3A, Current - Collector Cutoff (Max): 10µA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 3A, 2V, Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 12-SIP, Part Status: Active.