SMMA511DJ-T1-GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A PPAK8X8
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 12V
Power - Max: 6.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
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Технічний опис SMMA511DJ-T1-GE3 Vishay Siliconix
Description: MOSFET N/P-CH 12V 4.5A PPAK8X8, Supplier Device Package: PowerPAK® SC-70-6 Dual, Vgs(th) (Max) @ Id: 1V @ 250µA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 8V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.2A, 4.5V, Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 6V, Current - Continuous Drain (Id) @ 25°C: 4.5A, Drain to Source Voltage (Vdss): 12V, Power - Max: 6.5W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel, Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6 Dual, Packaging: Tape & Reel (TR).


