SQ1470AEH-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 3000+ | 12.84 грн |
| 6000+ | 11.48 грн |
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Технічний опис SQ1470AEH-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ1470AEH-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.7 A, 0.065 ohm, SC-70, Oberflächenmontage, tariffCode: 85412100, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 1.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Gate-Source-Schwellenspannung, max.: 1V, Verlustleistung: 3.3W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SC-70, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 0.065ohm.
Інші пропозиції SQ1470AEH-T1_GE3 за ціною від 12.31 грн до 64.90 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SQ1470AEH-T1_GE3 | VISHAY |
Description: VISHAY - SQ1470AEH-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.7 A, 0.065 ohm, SC-70, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 1.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 3.3W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.065ohm |
на замовлення 5534 шт: термін постачання 21-31 дні (днів) |
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SQ1470AEH-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 1.7A SOT363 SC70 Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1.6V @ 250µA Power Dissipation (Max): 3.3W (Tc) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 268633 шт: термін постачання 21-31 дні (днів) |
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SQ1470AEH-T1_GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.7A; Idm: 6.7A Mounting: SMD Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Technology: TrenchFET® Polarisation: unipolar Gate charge: 5.2nC On-state resistance: 0.115Ω Drain current: 1.7A Power dissipation: 3.3W Pulsed drain current: 6.7A Gate-source voltage: ±12V Drain-source voltage: 30V Case: SC70-6; SOT363 |
на замовлення 2893 шт: термін постачання 14-30 дні (днів) |
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SQ1470AEH-T1_GE3 | Vishay Semiconductors |
MOSFETs 30V Vds +/-12V Vgs AEC-Q101 Qualified |
на замовлення 201746 шт: термін постачання 21-30 дні (днів) |
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SQ1470AEH-T1_GE3 | VISHAY |
Description: VISHAY - SQ1470AEH-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.7 A, 0.065 ohm, SC-70, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 1.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 1V Verlustleistung: 3.3W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.065ohm |
на замовлення 5534 шт: термін постачання 21-31 дні (днів) |
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Виробник: VISHAY
Description: VISHAY - SQ1470AEH-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.7 A, 0.065 ohm, SC-70, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 3.3W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.065ohm
Description: VISHAY - SQ1470AEH-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.7 A, 0.065 ohm, SC-70, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 3.3W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.065ohm
на замовлення 5534 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 26.34 грн |
| 500+ | 19.66 грн |
| 1500+ | 15.61 грн |
| SQ1470AEH-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.3W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 30V 1.7A SOT363 SC70
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.2 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 3.3W (Tc)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 268633 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.47 грн |
| 10+ | 32.84 грн |
| 100+ | 24.46 грн |
| 500+ | 17.58 грн |
| 1000+ | 15.81 грн |
| SQ1470AEH-T1_GE3 |
|
Виробник: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.7A; Idm: 6.7A
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.115Ω
Drain current: 1.7A
Power dissipation: 3.3W
Pulsed drain current: 6.7A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Case: SC70-6; SOT363
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 1.7A; Idm: 6.7A
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 5.2nC
On-state resistance: 0.115Ω
Drain current: 1.7A
Power dissipation: 3.3W
Pulsed drain current: 6.7A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Case: SC70-6; SOT363
на замовлення 2893 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 59.26 грн |
| 17+ | 25.14 грн |
| 50+ | 21.08 грн |
| 100+ | 19.55 грн |
| 500+ | 16.51 грн |
| 1000+ | 15.32 грн |
| 1500+ | 14.81 грн |
| SQ1470AEH-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 30V Vds +/-12V Vgs AEC-Q101 Qualified
MOSFETs 30V Vds +/-12V Vgs AEC-Q101 Qualified
на замовлення 201746 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 64.90 грн |
| 10+ | 40.03 грн |
| 100+ | 22.57 грн |
| 500+ | 17.30 грн |
| 1000+ | 15.61 грн |
| 3000+ | 13.36 грн |
| 6000+ | 12.31 грн |
| SQ1470AEH-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQ1470AEH-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.7 A, 0.065 ohm, SC-70, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 3.3W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.065ohm
Description: VISHAY - SQ1470AEH-T1_GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 1.7 A, 0.065 ohm, SC-70, Oberflächenmontage
tariffCode: 85412100
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 1.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 1V
Verlustleistung: 3.3W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.065ohm
на замовлення 5534 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 13+ | 64.90 грн |
| 50+ | 40.61 грн |
| 100+ | 26.34 грн |
| 500+ | 19.66 грн |
| 1500+ | 15.61 грн |