SQ1912AEEH-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.8A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 14.15 грн |
| 6000+ | 12.50 грн |
| 9000+ | 11.93 грн |
| 15000+ | 10.60 грн |
| 21000+ | 10.24 грн |
| 30000+ | 9.89 грн |
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Технічний опис SQ1912AEEH-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ1912AEEH-T1_GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.2 ohm, tariffCode: 85412100, euEccn: NLR, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 800mA, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 20V, Dauer-Drainstrom Id, n-Kanal: 800mA, Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm, Verlustleistung, p-Kanal: 1.5W, Drain-Source-Spannung Vds, n-Kanal: 20V, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SC-70, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 1.5W, Betriebstemperatur, max.: 175°C.
Інші пропозиції SQ1912AEEH-T1_GE3 за ціною від 14.88 грн до 59.44 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQ1912AEEH-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.8A SC70-6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SC-70-6 Grade: Automotive Qualification: AEC-Q101 |
на замовлення 110964 шт: термін постачання 21-31 дні (днів) |
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SQ1912AEEH-T1_GE3 | VISHAY |
Description: VISHAY - SQ1912AEEH-T1_GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.2 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 800mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 800mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 175°C |
на замовлення 6438 шт: термін постачання 21-31 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SQ1912AEEH-T1_GE3 | Vishay / Siliconix |
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified |
на замовлення 130735 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SQ1912AEEH-T1_GE3 | VISHAY |
Description: VISHAY - SQ1912AEEH-T1_GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.2 ohm tariffCode: 85412100 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 800mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 20V Dauer-Drainstrom Id, n-Kanal: 800mA Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm Verlustleistung, p-Kanal: 1.5W Drain-Source-Spannung Vds, n-Kanal: 20V SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SC-70 Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 1.5W Betriebstemperatur, max.: 175°C |
на замовлення 6438 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SQ1912AEEH-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.8A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET 2N-CH 20V 0.8A SC70-6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 27pF @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.25nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Qualification: AEC-Q101
на замовлення 110964 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.44 грн |
| 10+ | 35.62 грн |
| 100+ | 23.03 грн |
| 500+ | 16.52 грн |
| 1000+ | 14.88 грн |
| SQ1912AEEH-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQ1912AEEH-T1_GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.2 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 800mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 175°C
Description: VISHAY - SQ1912AEEH-T1_GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.2 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 800mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 175°C
на замовлення 6438 шт:
термін постачання 21-31 дні (днів)
| SQ1912AEEH-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified
MOSFETs N Ch 20Vds 12Vgs AEC-Q101 Qualified
на замовлення 130735 шт:
термін постачання 21-30 дні (днів)
| SQ1912AEEH-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQ1912AEEH-T1_GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.2 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 800mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 175°C
Description: VISHAY - SQ1912AEEH-T1_GE3 - Dual-MOSFET, n-Kanal, 20 V, 20 V, 800 mA, 800 mA, 0.2 ohm
tariffCode: 85412100
euEccn: NLR
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 800mA
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 20V
Dauer-Drainstrom Id, n-Kanal: 800mA
Drain-Source-Durchgangswiderstand, p-Kanal: 0.2ohm
Verlustleistung, p-Kanal: 1.5W
Drain-Source-Spannung Vds, n-Kanal: 20V
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SC-70
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.2ohm
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 1.5W
Betriebstemperatur, max.: 175°C
на замовлення 6438 шт:
термін постачання 21-31 дні (днів)