SQ1912EH-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.8A SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SC-70-6
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 10.44 грн |
| 6000+ | 9.17 грн |
| 9000+ | 8.72 грн |
| 15000+ | 7.71 грн |
Відгуки про товар
Написати відгук
Технічний опис SQ1912EH-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.8A SC70-6, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.5W, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V, Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SC-70-6, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції SQ1912EH-T1_GE3 за ціною від 10.15 грн до 55.18 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQ1912EH-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 20V 0.8A SC70-6Part Status: Active Supplier Device Package: SC-70-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Drain to Source Voltage (Vdss): 20V Power - Max: 1.5W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 24615 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||
|
SQ1912EH-T1_GE3 | Vishay / Siliconix |
MOSFETs 20V Vds 0.8A Id AEC-Q101 Qualified |
на замовлення 181179 шт: термін постачання 21-30 дні (днів) |
|
| SQ1912EH-T1_GE3 |
![]() |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 20V 0.8A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET 2N-CH 20V 0.8A SC70-6
Part Status: Active
Supplier Device Package: SC-70-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 1.15nC @ 4.5V
Rds On (Max) @ Id, Vgs: 280mOhm @ 1.2A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 75pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 24615 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 45.99 грн |
| 12+ | 27.34 грн |
| 100+ | 17.44 грн |
| 500+ | 12.37 грн |
| 1000+ | 11.07 грн |
| SQ1912EH-T1_GE3 |
![]() |
Виробник: Vishay / Siliconix
MOSFETs 20V Vds 0.8A Id AEC-Q101 Qualified
MOSFETs 20V Vds 0.8A Id AEC-Q101 Qualified
на замовлення 181179 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 55.18 грн |
| 10+ | 33.80 грн |
| 100+ | 18.96 грн |
| 500+ | 14.45 грн |
| 1000+ | 12.97 грн |
| 3000+ | 11.07 грн |
| 6000+ | 10.15 грн |



