SQ2308FES-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3000+ | 8.92 грн |
| 6000+ | 7.83 грн |
| 9000+ | 7.44 грн |
| 15000+ | 6.57 грн |
| 21000+ | 6.33 грн |
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Технічний опис SQ2308FES-T1_GE3 Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V, Power Dissipation (Max): 2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції SQ2308FES-T1_GE3 за ціною від 7.81 грн до 41.60 грн
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SQ2308FES-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 60V 2.3A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 21329 шт: термін постачання 21-31 дні (днів) |
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SQ2308FES-T1_GE3 | Vishay / Siliconix |
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET |
на замовлення 24434 шт: термін постачання 21-30 дні (днів) |
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| SQ2308FES-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 2.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 2.3A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2.3A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 30 V
Qualification: AEC-Q101
на замовлення 21329 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 39.56 грн |
| 13+ | 23.47 грн |
| 100+ | 14.96 грн |
| 500+ | 10.59 грн |
| 1000+ | 9.47 грн |
| SQ2308FES-T1_GE3 |
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Виробник: Vishay / Siliconix
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
MOSFETs N-CHANNEL 60-V (D-S) 175C MOSFET
на замовлення 24434 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 41.60 грн |
| 13+ | 25.07 грн |
| 100+ | 14.63 грн |
| 500+ | 10.76 грн |
| 3000+ | 9.14 грн |
| 6000+ | 8.51 грн |
| 9000+ | 7.81 грн |