Технічний опис SQ2318BES-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Tc), Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції SQ2318BES-T1_GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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SQ2318BES-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 8A SOT23-3 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 3000 шт В кошику од. на суму грн. |
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SQ2318BES-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
SQ2318BES-T1_GE3 | VISHAY |
 Description: VISHAY - SQ2318BES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.021 ohm, SOT-23, OberflächenmontageTransistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40 Dauer-Drainstrom Id: 8 Qualifikation: AEC-Q101 Verlustleistung Pd: 3 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 3 Bauform - Transistor: SOT-23 Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: TrenchFET Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.021 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.021 SVHC: No SVHC (10-Jun-2022) |
товару немає в наявності |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
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SQ2318BES-T1_GE3 | VISHAY |
Description: VISHAY - SQ2318BES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.021 ohm, SOT-23, Oberflächenmontage Verlustleistung: 3 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 0.021 Qualifikation: AEC-Q101 SVHC: No SVHC (10-Jun-2022) |
товару немає в наявності |
Мінімальне замовлення: 100 шт В кошику од. на суму грн. |
| SQ2318BES-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 40V 8A SOT23-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 3000 шт
В кошику
од. на суму грн.
| SQ2318BES-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 26.3mOhm @ 4A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| SQ2318BES-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQ2318BES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.021 ohm, SOT-23, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 8
Qualifikation: AEC-Q101
Verlustleistung Pd: 3
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 3
Bauform - Transistor: SOT-23
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3
Produktpalette: TrenchFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.021
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.021
SVHC: No SVHC (10-Jun-2022)
Description: VISHAY - SQ2318BES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.021 ohm, SOT-23, Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40
Dauer-Drainstrom Id: 8
Qualifikation: AEC-Q101
Verlustleistung Pd: 3
Gate-Source-Schwellenspannung, max.: 2
Verlustleistung: 3
Bauform - Transistor: SOT-23
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3
Produktpalette: TrenchFET
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.021
Rds(on)-Prüfspannung: 10
Betriebstemperatur, max.: 175
Drain-Source-Durchgangswiderstand: 0.021
SVHC: No SVHC (10-Jun-2022)
товару немає в наявності
Мінімальне замовлення: 5 шт
В кошику
од. на суму грн.
| SQ2318BES-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQ2318BES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.021 ohm, SOT-23, Oberflächenmontage
Verlustleistung: 3
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.021
Qualifikation: AEC-Q101
SVHC: No SVHC (10-Jun-2022)
Description: VISHAY - SQ2318BES-T1_GE3 - Leistungs-MOSFET, n-Kanal, 40 V, 8 A, 0.021 ohm, SOT-23, Oberflächenmontage
Verlustleistung: 3
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.021
Qualifikation: AEC-Q101
SVHC: No SVHC (10-Jun-2022)
товару немає в наявності
Мінімальне замовлення: 100 шт
В кошику
од. на суму грн.