SQ2319CES-T1_GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 7+ | 48.76 грн |
| 12+ | 29.34 грн |
| 100+ | 16.42 грн |
| 500+ | 12.48 грн |
| 1000+ | 10.71 грн |
| 3000+ | 9.09 грн |
| 6000+ | 8.04 грн |
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Технічний опис SQ2319CES-T1_GE3 Vishay / Siliconix
Description: MOSFET P-CH 40V 4.6A SOT23-3, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Tc), Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції SQ2319CES-T1_GE3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
 |
SQ2319CES-T1_GE3 | Vishay Siliconix |
 Description: MOSFET P-CH 40V 4.6A SOT23-3Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| SQ2319CES-T1/GE3 | Vishay | MOSFETs |
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В кошику од. на суму грн. | |
| SQ2319CES-T1-GE3 | Vishay | MOSFETs 40V P-CHANNEL (D-S) |
товару немає в наявності |
В кошику од. на суму грн. |
| SQ2319CES-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 4.6A SOT23-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 40V 4.6A SOT23-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| SQ2319CES-T1-GE3 |
Виробник: Vishay
MOSFETs 40V P-CHANNEL (D-S)
MOSFETs 40V P-CHANNEL (D-S)
товару немає в наявності
В кошику
од. на суму грн.