SQ2361AEES-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SSOT23
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TA)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 16.06 грн |
| 6000+ | 14.68 грн |
| 9000+ | 13.63 грн |
| 30000+ | 12.50 грн |
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Технічний опис SQ2361AEES-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SSOT23, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TA), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції SQ2361AEES-T1_GE3 за ціною від 12.48 грн до 56.57 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQ2361AEES-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 2.8A SSOT23Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TA) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Power Dissipation (Max): 2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V Qualification: AEC-Q101 |
на замовлення 74208 шт: термін постачання 21-31 дні (днів) |
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SQ2361AEES-T1_GE3 | Vishay / Siliconix |
MOSFETs -60V Vds +/-20V Vgs AEC-Q101 Qualified |
на замовлення 79846 шт: термін постачання 21-30 дні (днів) |
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| SQ2361AEES-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 2.8A SSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Qualification: AEC-Q101
Description: MOSFET P-CH 60V 2.8A SSOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 30 V
Qualification: AEC-Q101
на замовлення 74208 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 47.58 грн |
| 10+ | 39.17 грн |
| 100+ | 27.26 грн |
| 500+ | 19.97 грн |
| 1000+ | 16.24 грн |
| SQ2361AEES-T1_GE3 |
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Виробник: Vishay / Siliconix
MOSFETs -60V Vds +/-20V Vgs AEC-Q101 Qualified
MOSFETs -60V Vds +/-20V Vgs AEC-Q101 Qualified
на замовлення 79846 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 56.57 грн |
| 10+ | 42.72 грн |
| 100+ | 24.88 грн |
| 500+ | 19.17 грн |
| 1000+ | 16.85 грн |
| 3000+ | 13.46 грн |
| 9000+ | 12.48 грн |



