SQ2361CES-T1_BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 15+ | 21.91 грн |
| 21+ | 14.54 грн |
| 25+ | 12.96 грн |
| 100+ | 10.47 грн |
| 250+ | 9.67 грн |
| 500+ | 9.18 грн |
| 1000+ | 8.64 грн |
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Технічний опис SQ2361CES-T1_BE3 Vishay Siliconix
Description: P-CHANNEL 60-V (D-S) 175C MOSFET, Power Dissipation (Max): 2W (Tc), Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA.
Інші пропозиції SQ2361CES-T1_BE3 за ціною від 8.76 грн до 47.46 грн
| Фото | Назва | Виробник | Інформація |
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| SQ2361CES-T1_BE3 | Виробник : Vishay Semiconductors |
MOSFETs P-CHANNEL 60-V (D-S) 175C MOSFET |
на замовлення 2710 шт: термін постачання 21-30 дні (днів) |
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SQ2361CES-T1_BE3 | Виробник : Vishay Siliconix |
Description: P-CHANNEL 60-V (D-S) 175C MOSFET Power Dissipation (Max): 2W (Tc) Rds On (Max) @ Id, Vgs: 177mOhm @ 2.4A, 10V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA |
товару немає в наявності |