SQ2389ES-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 3W (Tc)
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Технічний опис SQ2389ES-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ2389ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 4.1 A, 0.094 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 4.1A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 2V, euEccn: NLR, Verlustleistung: 3.3W, Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: TrenchFET, productTraceability: No, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.094ohm, SVHC: No SVHC (10-Jun-2022).
Інші пропозиції SQ2389ES-T1_GE3 за ціною від 18.22 грн до 70.82 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
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SQ2389ES-T1_GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23 Mounting: SMD Pulsed drain current: -16A Power dissipation: 1W Gate charge: 12nC Polarisation: unipolar Drain current: -4.1A Kind of channel: enhancement Drain-source voltage: -40V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT23 On-state resistance: 169mΩ |
на замовлення 89 шт: термін постачання 14-30 дні (днів) |
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SQ2389ES-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CH 40V 4.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V Power Dissipation (Max): 3W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V Qualification: AEC-Q101 |
на замовлення 4540 шт: термін постачання 21-31 дні (днів) |
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SQ2389ES-T1_GE3 | Vishay / Siliconix |
MOSFETs -40V Vds +/-20V Vgs AEC-Q101 Qualified |
на замовлення 24605 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SQ2389ES-T1_GE3 | VISHAY |
Description: VISHAY - SQ2389ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 4.1 A, 0.094 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 4.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 3.3W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.094ohm SVHC: No SVHC (10-Jun-2022) |
на замовлення 103818 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
| SQ2389ES-T1_GE3 |
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Виробник: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23
Mounting: SMD
Pulsed drain current: -16A
Power dissipation: 1W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -4.1A
Kind of channel: enhancement
Drain-source voltage: -40V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 169mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -4.1A; Idm: -16A; 1W; SOT23
Mounting: SMD
Pulsed drain current: -16A
Power dissipation: 1W
Gate charge: 12nC
Polarisation: unipolar
Drain current: -4.1A
Kind of channel: enhancement
Drain-source voltage: -40V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 169mΩ
на замовлення 89 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 41.69 грн |
| 12+ | 36.16 грн |
| 50+ | 30.47 грн |
| SQ2389ES-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 4.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 4.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 10A, 10V
Power Dissipation (Max): 3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 20 V
Qualification: AEC-Q101
на замовлення 4540 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 5+ | 70.82 грн |
| 10+ | 42.47 грн |
| 100+ | 27.77 грн |
| 500+ | 20.13 грн |
| 1000+ | 18.22 грн |
| SQ2389ES-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs -40V Vds +/-20V Vgs AEC-Q101 Qualified
MOSFETs -40V Vds +/-20V Vgs AEC-Q101 Qualified
на замовлення 24605 шт:
термін постачання 21-30 дні (днів)
| SQ2389ES-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQ2389ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 4.1 A, 0.094 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 3.3W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.094ohm
SVHC: No SVHC (10-Jun-2022)
Description: VISHAY - SQ2389ES-T1_GE3 - Leistungs-MOSFET, p-Kanal, 40 V, 4.1 A, 0.094 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 4.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2V
euEccn: NLR
Verlustleistung: 3.3W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.094ohm
SVHC: No SVHC (10-Jun-2022)
на замовлення 103818 шт:
термін постачання 21-31 дні (днів)