SQ3426AEEV-T1_GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 9+ | 37.15 грн |
| 10+ | 36.14 грн |
| 100+ | 23.11 грн |
| 500+ | 19.41 грн |
| 1000+ | 18.02 грн |
| 3000+ | 16.34 грн |
| 6000+ | 15.78 грн |
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Технічний опис SQ3426AEEV-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Power Dissipation (Max): 5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції SQ3426AEEV-T1_GE3 за ціною від 20.91 грн до 80.91 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQ3426AEEV-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 60V 7A 6TSOPCurrent - Continuous Drain (Id) @ 25°C: 7A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V |
на замовлення 1328 шт: термін постачання 21-31 дні (днів) |
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| SQ3426AEEV-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET N-CH 60V 7A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Description: MOSFET N-CH 60V 7A 6TSOP
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
на замовлення 1328 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 80.91 грн |
| 10+ | 48.64 грн |
| 100+ | 31.83 грн |
| 500+ | 23.10 грн |
| 1000+ | 20.91 грн |