SQ3427EV-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 60V 5.3A 6TSOP
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 18.11 грн |
| 6000+ | 16.52 грн |
| 9000+ | 15.30 грн |
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Технічний опис SQ3427EV-T1_GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 5.3A 6TSOP, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5W (Tc), Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Інші пропозиції SQ3427EV-T1_GE3 за ціною від 16.06 грн до 85.19 грн
| Фото | Назва | Виробник | Інформація |
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SQ3427EV-T1_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 60V 5.3A 6TSOP Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 5W (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
на замовлення 17440 шт: термін постачання 21-31 дні (днів) |
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SQ3427EV-T1_GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.3A; Idm: -21A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -5.3A Power dissipation: 5W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 178mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -21A Gate charge: 22nC |
на замовлення 1196 шт: термін постачання 14-30 дні (днів) |
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SQ3427EV-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs P Ch -60Vds 20Vgs AEC-Q101 Qualified |
на замовлення 388694 шт: термін постачання 21-30 дні (днів) |
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