SQ3469CEV-T1_GE3 Vishay Siliconix


sq3469cev.pdf
Виробник: Vishay Siliconix
Description: P-CHANNEL 22-V (D-S) 175C MOSFET
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
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Технічний опис SQ3469CEV-T1_GE3 Vishay Siliconix

Description: P-CHANNEL 22-V (D-S) 175C MOSFET, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 5W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V, Current - Continuous Drain (Id) @ 25°C: 8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide).

Інші пропозиції SQ3469CEV-T1_GE3

Фото Назва Виробник Інформація Доступність Ціна
SQ3469CEV-T1_GE3 SQ3469CEV-T1_GE3 Vishay Siliconix sq3469cev.pdf Description: P-CHANNEL 22-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
SQ3469CEV-T1_GE3 sq3469cev.pdf
Виробник: Vishay Siliconix
Description: P-CHANNEL 22-V (D-S) 175C MOSFET
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 6.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.