SQ4064EY-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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Технічний опис SQ4064EY-T1_GE3 Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 6.8W (Tc), Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SQ4064EY-T1_GE3 за ціною від 25.63 грн до 90.34 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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SQ4064EY-T1_GE3 | Vishay / Siliconix |
MOSFETs N Ch 60Vds 20Vgs AEC-Q101 Qualified |
на замовлення 14550 шт: термін постачання 21-30 дні (днів) |
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SQ4064EY-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CHANNEL 60V 12A 8SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 6.8W (Tc) Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: 8-SOIC |
на замовлення 8608 шт: термін постачання 21-31 дні (днів) |
|
| SQ4064EY-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs N Ch 60Vds 20Vgs AEC-Q101 Qualified
MOSFETs N Ch 60Vds 20Vgs AEC-Q101 Qualified
на замовлення 14550 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 76.50 грн |
| 10+ | 61.83 грн |
| 100+ | 38.41 грн |
| 500+ | 30.93 грн |
| 1000+ | 28.42 грн |
| 2500+ | 25.63 грн |
| SQ4064EY-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SOIC
Description: MOSFET N-CHANNEL 60V 12A 8SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 6.8W (Tc)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2096 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: 8-SOIC
на замовлення 8608 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 90.34 грн |
| 10+ | 58.47 грн |
| 100+ | 40.82 грн |
| 500+ | 30.85 грн |
| 1000+ | 28.40 грн |