SQ4153EY-T1_BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 3+ | 113.44 грн |
| 10+ | 89.35 грн |
| 100+ | 69.46 грн |
Відгуки про товар
Написати відгук
Технічний опис SQ4153EY-T1_BE3 Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 7.1W (Tc), Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Grade: Automotive.
Інші пропозиції SQ4153EY-T1_BE3 за ціною від 37.00 грн до 132.24 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SQ4153EY-T1_BE3 | Виробник : Vishay Semiconductors |
MOSFETs N-CHANNEL 12V |
на замовлення 9480 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
SQ4153EY-T1_BE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 25A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 7.1W (Tc) Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Grade: Automotive |
товару немає в наявності |
