SQ4153EY-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V
Qualification: AEC-Q101
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Технічний опис SQ4153EY-T1_GE3 Vishay Siliconix
Description: VISHAY - SQ4153EY-T1_GE3 - Leistungs-MOSFET, p-Kanal, 12 V, 25 A, 0.00832 ohm, SOIC, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 12V, rohsCompliant: YES, Dauer-Drainstrom Id: 25A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 900mV, euEccn: NLR, Verlustleistung: 7.1W, Bauform - Transistor: SOIC, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, Kanaltyp: p-Kanal, Rds(on)-Prüfspannung: 4.5V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.00832ohm, SVHC: No SVHC (04-Feb-2026).
Інші пропозиції SQ4153EY-T1_GE3 за ціною від 45.20 грн до 226.47 грн
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SQ4153EY-T1_GE3 | Vishay Siliconix |
Description: MOSFET P-CHANNEL 12V 25A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V Power Dissipation (Max): 7.1W (Tc) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V Qualification: AEC-Q101 |
на замовлення 4680 шт: термін постачання 21-31 дні (днів) |
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SQ4153EY-T1_GE3 | Vishay / Siliconix |
MOSFETs P Ch -12Vds 8Vgs AEC-Q101 Qualified |
на замовлення 29645 шт: термін постачання 21-30 дні (днів) |
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SQ4153EY-T1_GE3 | VISHAY |
Description: VISHAY - SQ4153EY-T1_GE3 - Leistungs-MOSFET, p-Kanal, 12 V, 25 A, 0.00832 ohm, SOIC, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 12V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 7.1W Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.00832ohm SVHC: No SVHC (04-Feb-2026) |
на замовлення 2490 шт: термін постачання 21-31 дні (днів) |
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| SQ4153EY-T1_GE3 |
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Виробник: Vishay Siliconix
Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V
Qualification: AEC-Q101
Description: MOSFET P-CHANNEL 12V 25A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 8.32mOhm @ 14A, 4.5V
Power Dissipation (Max): 7.1W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 11000 pF @ 6 V
Qualification: AEC-Q101
на замовлення 4680 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 113.91 грн |
| 10+ | 89.72 грн |
| 100+ | 69.75 грн |
| 500+ | 55.48 грн |
| 1000+ | 45.20 грн |
| SQ4153EY-T1_GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs P Ch -12Vds 8Vgs AEC-Q101 Qualified
MOSFETs P Ch -12Vds 8Vgs AEC-Q101 Qualified
на замовлення 29645 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 168.63 грн |
| 10+ | 106.80 грн |
| 100+ | 63.68 грн |
| 500+ | 50.90 грн |
| 1000+ | 50.00 грн |
| 2500+ | 49.16 грн |
| 5000+ | 46.64 грн |
| SQ4153EY-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQ4153EY-T1_GE3 - Leistungs-MOSFET, p-Kanal, 12 V, 25 A, 0.00832 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 12V
rohsCompliant: YES
Dauer-Drainstrom Id: 25A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 900mV
euEccn: NLR
Verlustleistung: 7.1W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00832ohm
SVHC: No SVHC (04-Feb-2026)
Description: VISHAY - SQ4153EY-T1_GE3 - Leistungs-MOSFET, p-Kanal, 12 V, 25 A, 0.00832 ohm, SOIC, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 12V
rohsCompliant: YES
Dauer-Drainstrom Id: 25A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 900mV
euEccn: NLR
Verlustleistung: 7.1W
Bauform - Transistor: SOIC
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 4.5V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.00832ohm
SVHC: No SVHC (04-Feb-2026)
на замовлення 2490 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 226.47 грн |
| 10+ | 145.82 грн |
| 100+ | 100.20 грн |
| 500+ | 73.76 грн |
| 1000+ | 65.99 грн |