SQ4401EY-T1_BE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 17.3A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 7.14W (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2500+ | 91.80 грн |
| 5000+ | 85.08 грн |
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Технічний опис SQ4401EY-T1_BE3 Vishay Siliconix
Description: MOSFET P-CH 40V 17.3A 8SOIC, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 7.14W (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SQ4401EY-T1_BE3 за ціною від 79.28 грн до 212.56 грн
| Фото | Назва | Виробник | Інформація |
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SQ4401EY-T1_BE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 40V 17.3A 8SOIC Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 7.14W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 14140 шт: термін постачання 21-31 дні (днів) |
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SQ4401EY-T1_BE3 | Виробник : Vishay Semiconductors | MOSFET P-CHANNEL 40V |
на замовлення 26913 шт: термін постачання 21-30 дні (днів) |
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