на замовлення 23952 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 49.40 грн |
| 10+ | 41.19 грн |
| 100+ | 29.43 грн |
| 500+ | 22.60 грн |
| 1000+ | 22.38 грн |
| 2500+ | 22.24 грн |
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Технічний опис SQ4532AEY-T1_BE3 Vishay Semiconductors
Description: MOSFET N/P-CH 30V 7.3A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: N and P-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.3W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V, Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Active, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQ4532AEY-T1_BE3 за ціною від 37.55 грн до 61.92 грн
| Фото | Назва | Виробник | Інформація |
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SQ4532AEY-T1_BE3 | Виробник : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 7.3A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 455 шт: термін постачання 21-31 дні (днів) |
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SQ4532AEY-T1_BE3 | Виробник : Vishay Siliconix |
Description: MOSFET N/P-CH 30V 7.3A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.3W (Tc) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc), 5.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 535pF @ 15V, 528pF @ 15V Rds On (Max) @ Id, Vgs: 31mOhm @ 4.9A, 10V, 70mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.8nC @ 10V, 10.2nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |