SQ4940AEY-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Технічний опис SQ4940AEY-T1_GE3 Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 8A, Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V, Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції SQ4940AEY-T1_GE3 за ціною від 28.99 грн до 124.84 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||||
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SQ4940AEY-T1_GE3 | VISHAY |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A Application: automotive industry Case: SO8 Kind of channel: enhancement Kind of package: reel; tape Type of transistor: N-MOSFET x2 Mounting: SMD Technology: TrenchFET® Polarisation: unipolar Gate charge: 43nC On-state resistance: 29mΩ Power dissipation: 1.3W Drain current: 5.3A Gate-source voltage: ±20V Pulsed drain current: 32A Drain-source voltage: 40V |
на замовлення 351 шт: термін постачання 14-30 дні (днів) |
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SQ4940AEY-T1_GE3 | Vishay |
Trans MOSFET N-CH 40V 8A 8-Pin SOIC N T/R Automotive AEC-Q101 |
на замовлення 374 шт: термін постачання 21-31 дні (днів) |
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SQ4940AEY-T1_GE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 40V 8A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 6584 шт: термін постачання 21-31 дні (днів) |
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SQ4940AEY-T1_GE3 | Vishay Semiconductors |
MOSFETs 40V 8A 4W AEC-Q101 Qualified |
на замовлення 5915 шт: термін постачання 21-30 дні (днів) |
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| SQ4940AEY-T1_GE3 |
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Виробник: VISHAY
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 29mΩ
Power dissipation: 1.3W
Drain current: 5.3A
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 40V
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 5.3A; Idm: 32A
Application: automotive industry
Case: SO8
Kind of channel: enhancement
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Mounting: SMD
Technology: TrenchFET®
Polarisation: unipolar
Gate charge: 43nC
On-state resistance: 29mΩ
Power dissipation: 1.3W
Drain current: 5.3A
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 40V
на замовлення 351 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 8+ | 61.75 грн |
| 9+ | 51.19 грн |
| 25+ | 45.87 грн |
| 100+ | 44.87 грн |
| SQ4940AEY-T1_GE3 |
|
Виробник: Vishay
Trans MOSFET N-CH 40V 8A 8-Pin SOIC N T/R Automotive AEC-Q101
Trans MOSFET N-CH 40V 8A 8-Pin SOIC N T/R Automotive AEC-Q101
на замовлення 374 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 199+ | 71.38 грн |
| 205+ | 69.37 грн |
| SQ4940AEY-T1_GE3 |
|
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 40V 8A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 741pF @ 20V
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 6584 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 119.60 грн |
| 10+ | 73.07 грн |
| 100+ | 48.86 грн |
| 500+ | 36.13 грн |
| 1000+ | 33.01 грн |
| SQ4940AEY-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs 40V 8A 4W AEC-Q101 Qualified
MOSFETs 40V 8A 4W AEC-Q101 Qualified
на замовлення 5915 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3+ | 124.84 грн |
| 10+ | 77.80 грн |
| 100+ | 45.29 грн |
| 500+ | 35.69 грн |
| 1000+ | 32.58 грн |
| 2500+ | 29.20 грн |
| 10000+ | 28.99 грн |