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Технічний опис SQ4946AEY-T1_BE3 Vishay / Siliconix
Description: MOSFET 2N-CH 60V 7A 8SOIC, Qualification: AEC-Q101, Grade: Automotive, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Drain to Source Voltage (Vdss): 60V, Power - Max: 4W (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції SQ4946AEY-T1_BE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
SQ4946AEY-T1_BE3 | Vishay Siliconix |
Description: MOSFET 2N-CH 60V 7A 8SOIC Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 4W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| SQ4946AEY-T1_BE3 |
Виробник: Vishay Siliconix
Description: MOSFET 2N-CH 60V 7A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 7A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 4W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.




