Технічний опис SQ4946AEY-T1_BE3 Vishay / Siliconix
Description: MOSFET 2N-CH 60V 7A 8SOIC, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V, Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQ4946AEY-T1_BE3
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SQ4946AEY-T1_BE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2N-CH 60V 7A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 25V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
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