SQ4949EY-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET 2P-CH 30V 7.5A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 3.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
| Кількість | Ціна |
|---|---|
| 2500+ | 43.90 грн |
Відгуки про товар
Написати відгук
Технічний опис SQ4949EY-T1_GE3 Vishay Siliconix
Description: MOSFET 2P-CH 30V 7.5A 8SOIC, Supplier Device Package: 8-SOIC, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V, Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), Drain to Source Voltage (Vdss): 30V, Power - Max: 3.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 P-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Part Status: Active.
Інші пропозиції SQ4949EY-T1_GE3 за ціною від 40.40 грн до 174.43 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SQ4949EY-T1_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET 2P-CH 30V 7.5A 8SOIC Part Status: Active Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 2.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 5.9A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1020pF @ 25V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Drain to Source Voltage (Vdss): 30V Power - Max: 3.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Qualification: AEC-Q101 Grade: Automotive Packaging: Cut Tape (CT) |
на замовлення 45414 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
SQ4949EY-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs Dual P-Chnl 30-V D-S AEC-Q101 Qualified |
на замовлення 31344 шт: термін постачання 21-30 дні (днів) |
|