SQ9945CEY-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 4W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V
Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 4+ | 81.76 грн |
| 10+ | 49.44 грн |
| 100+ | 32.55 грн |
| 500+ | 23.73 грн |
| 1000+ | 21.54 грн |
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Технічний опис SQ9945CEY-T1_GE3 Vishay Siliconix
Description: DUAL N-CHANNEL 60-V (D-S) 175C M, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 4W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V, Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V, Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-SOIC, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQ9945CEY-T1_GE3 за ціною від 18.24 грн до 84.79 грн
| Фото | Назва | Виробник | Інформація |
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SQ9945CEY-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs DUAL N-CHANNEL 60-V (D-S) 175C MOSFET |
на замовлення 1193 шт: термін постачання 21-30 дні (днів) |
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SQ9945CEY-T1_GE3 | Виробник : Vishay |
Trans MOSFET N-CH 60V 5.4A 8-Pin SO |
товару немає в наявності |
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SQ9945CEY-T1_GE3 | Виробник : Vishay Siliconix |
Description: DUAL N-CHANNEL 60-V (D-S) 175C M Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 4W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 470pF @ 25V Rds On (Max) @ Id, Vgs: 64mOhm @ 3.4A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |