SQA405CEJW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 39.5mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 6-PowerVDFN
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.85 грн |
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Технічний опис SQA405CEJW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerPAK®SC-70W-6, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 13.6W (Tc), Rds On (Max) @ Id, Vgs: 39.5mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: 6-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції SQA405CEJW-T1_GE3 за ціною від 11.27 грн до 38.33 грн
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SQA405CEJW-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE P-CHANNEL 40 V (D-S) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK®SC-70W-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 39.5mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 6-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 4638 шт: термін постачання 21-31 дні (днів) |
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SQA405CEJW-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET |
товару немає в наявності |
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| SQA405CEJW-T1_GE3 | Виробник : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -9A; Idm: -36A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -40V Drain current: -9A Pulsed drain current: -36A Power dissipation: 13.6W Gate-source voltage: ±20V On-state resistance: 72.7mΩ Mounting: SMD Gate charge: 34nC Kind of package: reel; tape Kind of channel: enhancement |
товару немає в наявності |