SQA410CEJW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 20 V (D-S)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SC-70-6 Dual
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK® SC-70-6 Dual
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
| Кількість | Ціна |
|---|---|
| 3000+ | 11.99 грн |
Відгуки про товар
Написати відгук
Технічний опис SQA410CEJW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 20 V (D-S), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SC-70-6 Dual, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: PowerPAK® SC-70-6 Dual, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 13.6W (Tc).
Інші пропозиції SQA410CEJW-T1_GE3 за ціною від 8.28 грн до 33.64 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
SQA410CEJW-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFET 20v 7.8amp AEC-Q101 |
на замовлення 27630 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
|
|
SQA410CEJW-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 20 V (D-S) Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: PowerPAK® SC-70-6 Dual Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SC-70-6 Dual Packaging: Cut Tape (CT) |
на замовлення 9003 шт: термін постачання 21-31 дні (днів) |
|