SQA410CEJW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 20 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V
Description: AUTOMOTIVE N-CHANNEL 20 V (D-S)
Packaging: Tape & Reel (TR)
Package / Case: PowerPAK® SC-70-6 Dual
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 13.6W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: PowerPAK® SC-70-6 Dual
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
3000+ | 11.02 грн |
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Технічний опис SQA410CEJW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 20 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SC-70-6 Dual, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V, Power Dissipation (Max): 13.6W (Tc), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: PowerPAK® SC-70-6 Dual, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V.
Інші пропозиції SQA410CEJW-T1_GE3 за ціною від 7.9 грн до 30.9 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SQA410CEJW-T1_GE3 | Виробник : Vishay Semiconductors | MOSFET 20v 7.8amp AEC-Q101 |
на замовлення 27630 шт: термін постачання 21-30 дні (днів) |
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SQA410CEJW-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 20 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SC-70-6 Dual Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.8A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V Power Dissipation (Max): 13.6W (Tc) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: PowerPAK® SC-70-6 Dual Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 10 V |
на замовлення 9003 шт: термін постачання 21-31 дні (днів) |
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