SQA413CEJW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 3000+ | 10.27 грн |
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Технічний опис SQA413CEJW-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PowerPAK®SC-70W-6, Vgs(th) (Max) @ Id: 1.3V @ 250µA, Power Dissipation (Max): 13.6W (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Wettable Flank, Package / Case: PowerPAK® SC-70-6, Packaging: Tape & Reel (TR).
Інші пропозиції SQA413CEJW-T1_GE3 за ціною від 8.92 грн до 48.22 грн
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SQA413CEJW-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE P-CHANNEL 20 V (D-S) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: PowerPAK®SC-70W-6 Vgs(th) (Max) @ Id: 1.3V @ 250µA Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® SC-70-6 Packaging: Cut Tape (CT) |
на замовлення 8065 шт: термін постачання 21-31 дні (днів) |
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SQA413CEJW-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs P-CHANNEL 20-V (D-S) 175C MOSFET |
на замовлення 34862 шт: термін постачання 21-30 дні (днів) |
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