SQA602CEJW-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® SC-70-6
Packaging: Tape & Reel (TR)
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Технічний опис SQA602CEJW-T1_GE3 Vishay Siliconix
Description: VISHAY - SQA602CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80V, 5.63A, 94 mOhm, PowerPAK SC-70W, SMD, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 80V, rohsCompliant: YES, Dauer-Drainstrom Id: 5.63A, hazardous: false, rohsPhthalatesCompliant: TBA, Qualifikation: AEC-101, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 2.5V, Verlustleistung: 13.6W, SVHC: No SVHC (25-Jun-2025), Bauform - Transistor: PowerPAK SC-70W, Anzahl der Pins: 6Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.094ohm.
Інші пропозиції SQA602CEJW-T1_GE3 за ціною від 11.45 грн до 32.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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SQA602CEJW-T1_GE3 | Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S) Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerPAK®SC-70W-6 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 13.6W (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: PowerPAK® SC-70-6 Packaging: Cut Tape (CT) |
на замовлення 5830 шт: термін постачання 21-31 дні (днів) |
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SQA602CEJW-T1_GE3 | Vishay Semiconductors |
MOSFETs Automotive N-Channel 80 V (D-S) 175C MOSFET , 94 mO 10V, 110 mO 4.5V |
на замовлення 6967 шт: термін постачання 21-30 дні (днів) |
В кошику од. на суму грн. | ||||||||||
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SQA602CEJW-T1_GE3 | VISHAY |
Description: VISHAY - SQA602CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80V, 5.63A, 94 mOhm, PowerPAK SC-70W, SMD tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 5.63A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.5V Verlustleistung: 13.6W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerPAK SC-70W Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.094ohm |
на замовлення 1900 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 5 шт В кошику од. на суму грн. |
| SQA602CEJW-T1_GE3 |
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Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
Description: AUTOMOTIVE N-CHANNEL 80 V (D-S)
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerPAK®SC-70W-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 13.6W (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: PowerPAK® SC-70-6
Packaging: Cut Tape (CT)
на замовлення 5830 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 10+ | 32.62 грн |
| 12+ | 26.92 грн |
| 100+ | 20.10 грн |
| 500+ | 14.82 грн |
| 1000+ | 11.45 грн |
| SQA602CEJW-T1_GE3 |
|
Виробник: Vishay Semiconductors
MOSFETs Automotive N-Channel 80 V (D-S) 175C MOSFET , 94 mO 10V, 110 mO 4.5V
MOSFETs Automotive N-Channel 80 V (D-S) 175C MOSFET , 94 mO 10V, 110 mO 4.5V
на замовлення 6967 шт:
термін постачання 21-30 дні (днів)
| SQA602CEJW-T1_GE3 |
|
Виробник: VISHAY
Description: VISHAY - SQA602CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80V, 5.63A, 94 mOhm, PowerPAK SC-70W, SMD
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.63A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 13.6W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerPAK SC-70W
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.094ohm
Description: VISHAY - SQA602CEJW-T1_GE3 - Leistungs-MOSFET, n-Kanal, 80V, 5.63A, 94 mOhm, PowerPAK SC-70W, SMD
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.63A
hazardous: false
rohsPhthalatesCompliant: TBA
Qualifikation: AEC-101
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 2.5V
Verlustleistung: 13.6W
SVHC: No SVHC (25-Jun-2025)
Bauform - Transistor: PowerPAK SC-70W
Anzahl der Pins: 6Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.094ohm
на замовлення 1900 шт:
термін постачання 21-31 дні (днів)