SQD100N03-3M4_GE3 Vishay Semiconductors
на замовлення 1638 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 152.41 грн |
| 10+ | 101.28 грн |
| 100+ | 67.15 грн |
| 250+ | 57.91 грн |
| 500+ | 55.63 грн |
| 1000+ | 49.47 грн |
| 2000+ | 47.12 грн |
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Технічний опис SQD100N03-3M4_GE3 Vishay Semiconductors
Description: MOSFET N-CH 30V 100A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 3.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції SQD100N03-3M4_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SQD100N03-3M4_GE3 | Виробник : Vishay |
 Automotive N-Channel 30 V (D-S) 175 C MOSFET |
товару немає в наявності |
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SQD100N03-3M4_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 100A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V Qualification: AEC-Q101 |
товару немає в наявності |
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SQD100N03-3M4_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 30V 100A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7349 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |