SQD25N06-22L_T4GE3 Vishay Semiconductors
на замовлення 6761 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 166.06 грн |
| 10+ | 103.93 грн |
| 100+ | 62.36 грн |
| 500+ | 52.87 грн |
| 1000+ | 45.94 грн |
| 2500+ | 40.74 грн |
| 5000+ | 39.16 грн |
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Технічний опис SQD25N06-22L_T4GE3 Vishay Semiconductors
Description: MOSFET N-CH 60V 25A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції SQD25N06-22L_T4GE3
| Фото | Назва | Виробник | Інформація |
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Ціна |
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SQD25N06-22L_T4GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 60V 25A TO252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
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SQD25N06-22L_T4GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 60V 25A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 20A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1975 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |