SQD25N15-52_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 107W (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
| Кількість | Ціна |
|---|---|
| 2000+ | 131.22 грн |
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Технічний опис SQD25N15-52_GE3 Vishay Siliconix
Description: MOSFET N-CH 150V 25A TO252, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 107W (Tc), Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції SQD25N15-52_GE3 за ціною від 102.43 грн до 315.06 грн
| Фото | Назва | Виробник | Інформація |
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SQD25N15-52_GE3 | Виробник : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 16A; 107W; DPAK,TO252 Mounting: SMD Case: DPAK; TO252 Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 34nC On-state resistance: 52mΩ Drain current: 16A Gate-source voltage: ±20V Power dissipation: 107W Drain-source voltage: 150V |
на замовлення 1969 шт: термін постачання 14-30 дні (днів) |
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SQD25N15-52_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 150V 25A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 15A, 10V Power Dissipation (Max): 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5110 шт: термін постачання 21-31 дні (днів) |
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SQD25N15-52_GE3 | Виробник : Vishay / Siliconix |
MOSFETs 150V 25A 136W AEC-Q101 Qualified |
на замовлення 4898 шт: термін постачання 21-30 дні (днів) |
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