SQD40020E_GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 2+ | 173.94 грн |
| 10+ | 109.18 грн |
| 100+ | 81.58 грн |
| 500+ | 71.03 грн |
| 4000+ | 41.70 грн |
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Технічний опис SQD40020E_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 100A TO252AA, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 107W (Tc), Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR).
Інші пропозиції SQD40020E_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SQD40020E_GE3 | Виробник : Vishay Siliconix |
 Description: MOSFET N-CH 40V 100A TO252AAQualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
товару немає в наявності |
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SQD40020E_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET N-CH 40V 100A TO252AA Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 107W (Tc) Rds On (Max) @ Id, Vgs: 2.33mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
товару немає в наявності |