SQD50P03-07_GE3 Vishay Semiconductors
на замовлення 4391 шт:
термін постачання 21-30 дні (днів)
Кількість | Ціна без ПДВ |
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2+ | 193.94 грн |
10+ | 171.21 грн |
100+ | 120.17 грн |
500+ | 98.81 грн |
1000+ | 81.45 грн |
2000+ | 70.77 грн |
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Технічний опис SQD50P03-07_GE3 Vishay Semiconductors
Description: MOSFET P-CH 30V 50A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V.
Інші пропозиції SQD50P03-07_GE3
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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SQD50P03-07_GE3 | Виробник : Vishay | Trans MOSFET P-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK |
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SQD50P03-07_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 50A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V |
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SQD50P03-07_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 30V 50A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 50A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 146 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5490 pF @ 25 V |
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SQD50P03-07-GE3 | Виробник : Vishay / Siliconix | MOSFET RECOMMENDED ALT 78-SQD50P03-07_GE3 |
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