SQD50P04-13L_T4GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
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Технічний опис SQD50P04-13L_T4GE3 Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-252AA, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 3W (Ta), 136W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount.
Інші пропозиції SQD50P04-13L_T4GE3 за ціною від 36.80 грн до 150.71 грн
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SQD50P04-13L_T4GE3 | Vishay Siliconix |
Description: P-CHANNEL 40-V (D-S) 175C MOSFET Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V Current - Continuous Drain (Id) @ 25°C: 50A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
на замовлення 5000 шт: термін постачання 21-31 дні (днів) |
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SQD50P04-13L_T4GE3 | Vishay / Siliconix |
MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET |
на замовлення 49738 шт: термін постачання 21-30 дні (днів) |
|
| SQD50P04-13L_T4GE3 |
|
Виробник: Vishay Siliconix
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: P-CHANNEL 40-V (D-S) 175C MOSFET
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 13mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3590 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
на замовлення 5000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 141.40 грн |
| 10+ | 86.77 грн |
| 100+ | 58.64 грн |
| 500+ | 43.71 грн |
| 1000+ | 40.06 грн |
| SQD50P04-13L_T4GE3 |
|
Виробник: Vishay / Siliconix
MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET
MOSFETs P-CHANNEL 40-V (D-S) 175C MOSFET
на замовлення 49738 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 150.71 грн |
| 10+ | 95.56 грн |
| 100+ | 55.65 грн |
| 500+ | 44.20 грн |
| 1000+ | 40.57 грн |
| 2500+ | 36.80 грн |