SQD90P04-9m4L_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: MOSFET P-CH 40V 90A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 90A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 951 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
2+ | 175.6 грн |
10+ | 140.52 грн |
100+ | 111.84 грн |
500+ | 88.81 грн |
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Технічний опис SQD90P04-9m4L_GE3 Vishay Siliconix
Description: MOSFET P-CH 40V 90A TO252AA, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-252AA, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції SQD90P04-9m4L_GE3 за ціною від 73.55 грн до 190.16 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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SQD90P04-9m4L_GE3 | Виробник : Vishay / Siliconix | MOSFET P-Channel 40V AEC-Q101 Qualified |
на замовлення 10339 шт: термін постачання 21-30 дні (днів) |
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SQD90P04-9M4L_GE3 | Виробник : Vishay | Trans MOSFET P-CH 40V 90A Automotive 3-Pin(2+Tab) TO-252AA |
товар відсутній |
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SQD90P04-9m4L_GE3 | Виробник : Vishay Siliconix |
Description: MOSFET P-CH 40V 90A TO252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 9.4mOhm @ 17A, 10V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6675 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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SQD90P04-9M4L-GE3 | Виробник : Vishay / Siliconix | MOSFET RECOMMENDED ALT SQD90P04-9M4L_GE3 |
товар відсутній |