SQJ128ELP-T1_GE3 Vishay Semiconductors
| Кількість | Ціна |
|---|---|
| 2+ | 176.05 грн |
| 10+ | 111.16 грн |
| 100+ | 66.41 грн |
| 500+ | 52.78 грн |
| 1000+ | 48.54 грн |
| 3000+ | 45.62 грн |
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Технічний опис SQJ128ELP-T1_GE3 Vishay Semiconductors
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S), Packaging: Tape & Reel (TR), Package / Case: PowerPAK® SO-8, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 437A (Tc), Rds On (Max) @ Id, Vgs: 1.15mOhm @ 15A, 10V, Power Dissipation (Max): 500W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: PowerPAK® SO-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7315 pF @ 25 V.
Інші пропозиції SQJ128ELP-T1_GE3
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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SQJ128ELP-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S) Packaging: Cut Tape (CT) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 437A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 15A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7315 pF @ 25 V |
на замовлення 2 шт: термін постачання 21-31 дні (днів) |
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SQJ128ELP-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 30 V (D-S) Packaging: Tape & Reel (TR) Package / Case: PowerPAK® SO-8 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 437A (Tc) Rds On (Max) @ Id, Vgs: 1.15mOhm @ 15A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: PowerPAK® SO-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7315 pF @ 25 V |
товару немає в наявності |