Технічний опис SQJ138EP-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 330A PPAK SO-8, Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 312W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 330A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції SQJ138EP-T1_GE3 за ціною від 40.85 грн до 125.26 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SQJ138EP-T1_GE3 | Vishay Siliconix |
 Description: MOSFET N-CH 40V 330A PPAK SO-8Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 27000 шт: термін постачання 21-31 дні (днів) |
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| SQJ138EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 330A PPAK SO-8 Input Capacitance (Ciss) (Max) @ Vds: 4715 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 312W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 330A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 28243 шт: термін постачання 21-31 дні (днів) |
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