SQJ142EP-T1_GE3 Vishay / Siliconix
| Кількість | Ціна |
|---|---|
| 4+ | 82.23 грн |
| 10+ | 66.71 грн |
| 100+ | 45.18 грн |
| 500+ | 38.27 грн |
| 1000+ | 31.22 грн |
| 3000+ | 29.39 грн |
| 6000+ | 29.11 грн |
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Технічний опис SQJ142EP-T1_GE3 Vishay / Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 167A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Power Dissipation (Max): 191W (Tc).
Інші пропозиції SQJ142EP-T1_GE3 за ціною від 31.46 грн до 79.29 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| SQJ142EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 167A PPAK SO-8 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 167A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Power Dissipation (Max): 191W (Tc) |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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| SQJ142EP-T1_GE3 | Vishay Siliconix |
Description: MOSFET N-CH 40V 167A PPAK SO-8 Power Dissipation (Max): 191W (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 167A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA |
на замовлення 4200 шт: термін постачання 21-31 дні (днів) |
|
| SQJ142EP-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 191W (Tc)
Description: MOSFET N-CH 40V 167A PPAK SO-8
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 191W (Tc)
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3000+ | 32.77 грн |
| SQJ142EP-T1_GE3 |
Виробник: Vishay Siliconix
Description: MOSFET N-CH 40V 167A PPAK SO-8
Power Dissipation (Max): 191W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Description: MOSFET N-CH 40V 167A PPAK SO-8
Power Dissipation (Max): 191W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 167A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: PowerPAK® SO-8
Vgs(th) (Max) @ Id: 3.5V @ 250µA
на замовлення 4200 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 79.29 грн |
| 10+ | 62.38 грн |
| 100+ | 48.55 грн |
| 500+ | 38.61 грн |
| 1000+ | 31.46 грн |