SQJ154EP-T1_GE3 Vishay Siliconix
Виробник: Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 214W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 243A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: PowerPAK® SO-8
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PowerPAK® SO-8
| Кількість | Ціна |
|---|---|
| 4+ | 82.14 грн |
| 10+ | 64.71 грн |
| 100+ | 50.33 грн |
| 500+ | 40.03 грн |
| 1000+ | 32.61 грн |
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Технічний опис SQJ154EP-T1_GE3 Vishay Siliconix
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S), Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: PowerPAK® SO-8, Vgs(th) (Max) @ Id: 3.5V @ 250µA, Power Dissipation (Max): 214W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 243A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: PowerPAK® SO-8, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції SQJ154EP-T1_GE3 за ціною від 28.93 грн до 123.32 грн
| Фото | Назва | Виробник | Інформація |
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SQJ154EP-T1_GE3 | Виробник : Vishay Semiconductors |
MOSFETs |
на замовлення 11557 шт: термін постачання 21-30 дні (днів) |
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SQJ154EP-T1_GE3 | Виробник : Vishay Siliconix |
Description: AUTOMOTIVE N-CHANNEL 40 V (D-S) Input Capacitance (Ciss) (Max) @ Vds: 3620 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: PowerPAK® SO-8 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 214W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 243A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: PowerPAK® SO-8 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
товару немає в наявності |